Surface Photovoltage Spectroscopy Characterization of GaAsSbN Layers Grown by Liquid-Phase Epitaxy
Surface Photovoltage Spectroscopy Characterization of GaAsSbN Layers Grown by Liquid-Phase Epitaxy
Author(s): Stefan Georgiev, V. Donchev, M. MilanovaSubject(s): Social Sciences, Education, School education, Vocational Education, Higher Education , History of Education, Scientific Life
Published by: Национално издателство за образование и наука „Аз-буки“
Keywords: dilute nitrides; GaAsSbN; surface photovoltage; band gap shift
Summary/Abstract: We present an experimental study of GaAsSbN layers with thickness around 1μm, grown by liquid-phase epitaxy on n-type GaAs substrates. The samples are studied by surface photovoltage (SPV) spectroscopy at room temperature. The analysis of the SPV spectra has provided information about the optical absorption and the photocarrier transport in the samples. In particular, a red shift of the energy bandgap with respect to GaAs is found. Its values are larger as compared to our previous data obtained in InGaAsN layers, grown by the same technique.
Journal: Химия. Природните науки в образованието
- Issue Year: 27/2018
- Issue No: 5
- Page Range: 658-665
- Page Count: 8
- Language: English
- Content File-PDF
