Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals
Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals
Author(s): Zsolt J. Horvath, P. Basa, T. Jaszi, György Molnár, A. I. Kovalev, D. L. Wainstein, T. Gerlai, P. TurmezeiSubject(s): Methodology and research technology
Published by: Žilinská univerzita v Žilině
Keywords: Non-Volatile Memory Structures; Silicon Nitride; Embedded Si; Ge Nanocrystals;
Summary/Abstract: Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 V, 10 ms.
Journal: Komunikácie - vedecké listy Žilinskej univerzity v Žiline
- Issue Year: 12/2010
- Issue No: 2
- Page Range: 19-22
- Page Count: 4
- Language: English
