Semiconductor Lasers Based on Quantum Well Structures
Semiconductor Lasers Based on Quantum Well Structures
Author(s): Dusan Pudis, J. Kováč, J. Kováč, J. JakabovicSubject(s): Methodology and research technology
Published by: Žilinská univerzita v Žilině
Keywords: Semiconductor; Lasers; Quantum Well Structures;
Summary/Abstract: We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the visible range 620-660 nm. The experimentally obtained transitions energies were compared with simple Kronig-Penney simulations. Going to low temperatures the stimulated emission from the cleaved edge was observed, which could be real perspective for laser applications.
Journal: Komunikácie - vedecké listy Žilinskej univerzity v Žiline
- Issue Year: 5/2003
- Issue No: 2
- Page Range: 29-32
- Page Count: 4
- Language: English