Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite
Cercetări privind aplicarea unor straturi subțiri de compuși semiconductori AII BVI în celulele solare pe bază de perovskite

Author(s): Mihail Popa
Subject(s): Education
Published by: Biblioteca Ştiinţifică a Universităţii de Stat Alecu Russo
Keywords: perovskite; ETL; HTL; ITO; PEDOT:PSS; PCBM; PCE
Summary/Abstract: n the work were presented preparation and research techniques of the electrical properties of the perovskite solar cells, in which ZnS, ZnSe and ZnTe thin films were applied. Using these layers as the electron transport layer (ETL), a power conversion efficiency (PCE) of about 2.57% was obtained, and cells with hole transport layer (HTL) the PCE achieved a maximum 2.14%. By doping ETL and HTL with chalcogenides a maximum yield of 3.98% was obtained. Preparation of solar cells with two layers of ETL or HTL increased of PCE to 7.40% maximum. By doping bulk heterojunction of perovskite with the calcogenide thin layers has increased PCE of cells up to 13.84%.

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